High Multi-site Gallium Nitride MOSFET Test Abstract: Gaillium Nitride (GaN) MOSFETs are supplying the world with better efficiency in a smaller package. However, the material and structural differences in a GaN based MOSFET causes challenges such as on-resistance variability, gate oxide layer reliability as well as increased switching speed causing reliability concerns. To address those, a different set of tests compared to existing Silicon-based MOSFETs are proposed. Furthermore, the fast ramping volume is driving the need of test multiple devices in parallel in both wafer level and after packaging. This paper discusses the challenges in testing GaN devices, starting from increasing avalanche breakdown voltage and decreasing on-resistance, gate, drain and substrate leakage current measurement techniques, and the increase of parallel test sites without sacrificing quality of test, concerns of reliability in mission-critical applications, etc. This paper will suggest possible approaches to overcome the challenges.
