GaN FET(HEMT) has unique test challenges, especially at wafer level and with Known Good Die (KGD). Repeated touchdowns can degrade performance. Integrating both static (DC) and dynamic Rdson (including hard switching and soft switching) in a one-touch-down test at wafer-level and KGD test helps to increase the manufacturability of these new devices. Enabling this combination of tests with a low cost test system is additionally explored.
