A buried stressor under the BOX is proposed as an alternative technology for providing strain in fully-depleted semiconductor-on-insulator devices. This approach introduces the opportunity to control strain through active layout and enables strain in anything-on-insulator. At the same time, the intervening BOX eliminates the possibility of introducing defects in the strained layer from the buried stressor below. Transistors fabricated in a FDSOI development line at Globalfoundries exhibited Idsat and gm improvements of ~10% and ~15% respectively. Through simulations with our partners at UC Louvain we extrapolate these DC performance improvements to key RF metrics and show the potential for boosting fT and fmax of RF transistors. We also show significant improvements may be achieved in the PAE of RF power amplifiers and the performance of RF switches. Finally we report an additional potential benefit of a SiGe layer under the BOX - reduction of parasitic conduction in high-resistivity substrates, as required for low propagation loss & harmonic distortion of RF signals.